Thin film circuit

ABSTRACT

A practical operational amplifier circuit is formed using thing film transisters. An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein cumulative distribution of mobilities of the n-channel type thin film transistors becomes 90% or more at 260 cm 2 /Vs and wherein cumulative distribution of mobilities of the p-channel type thin film transistors becomes 90% or more at 150 cm 2 /Vs. The thin film transistors have active layers formed using a crystalline silicon film fabricated using a metal element that selected to promote crystallization of silicon. The crystalline silicon film is a collection of a multiplicity of elongate crystal structures extending in a certain direction, and the above-described characteristics can be achieved by matching the extending direction and the moving direction of carriers.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor circuit utilizing acrystalline silicon film formed on a quartz substrate or the like and,more particularly, to a semiconductor circuit having the function of anoperational amplifier.

2. Description of the Related Art

Recently, researches are being carried out on techniques for formingsemiconductor devices utilizing a crystalline silicon film on a quartzsubstrate in an integrated Manner. A typical example of such techniquesis a technique for providing an active matrix circuit and a peripheraldriving circuit for driving the same circuit on a single quartzsubstrate or glass substrate.

The required circuit configurations include active matrix circuits,shift register circuits and buffer circuits.

An active layer of a thin film transistor forming a part of a circuit isformed using a crystalline silicon film. A crystalline silicon film canbe fabricated by forming an amorphous silicon film on a substrate andthen heating the same or irradiating the same with laser beams orperforming both to anneal the same.

A thin film transistor having an active layer formed by a crystallinesilicon film is more excellent in characteristics such as mobility thanthose having an active layer formed by an amorphous silicon film.

There is a need for higher levels of integration and higher performancealso for circuits formed using thin film transistors.

Recently, it is contemplated to use thin film transistors to configure,on a substrate, not only logic circuits such as shift registers but alsocircuits having computing functions such as operational amplifiers whichhave conventionally been externally attached to a substrate.

Operational amplifier circuits have been generally configured using asingle crystal silicon wafer.

An operational amplifier is basically comprised of a differentialamplifier circuit. A differential amplifier circuit is formed bycombining two transistors having similar characteristics.

In the case of a differential amplifier circuit, a change in temperatureor power supply voltage affect the two transistors simultaneously.Therefore, a change in temperature or power supply voltage does notaffect the output of the same.

In order for this, the two transistors forming the differentialamplifier circuit must have similar characteristics.

In practice, since it is difficult to provide two transistors havingcompletely identical characteristics, efforts are being made towardmanufacturing techniques to provide transistors as much similar to eachother as possible in their characteristics.

Thin film transistors utilizing a crystalline silicon film have mobilitylower than that of MOS transistors fabricated using a single crystalsilicon wafer. Further, they have a higher level of variation incharacteristics.

For this reason, it has been difficult in practice to form an operationamplifier circuit using such thin film transistors.

The present invention solves this problem. Specifically, it is an objectof the invention to form a practical operational amplifier circuit usingthin film transistors.

SUMMARY OF THE INVENTION

According to an aspect of the invention, there is provided a group ofoperational amplifier circuits constituted by thin film transistorsformed on an insulating surface characterized in that:

the operational amplifier circuits comprise a combination of at leastn-channel type thin film transistors and p-channel type thin filmtransistors;

90% or more of the n-channel type thin film transistors have mobility ata value of 260 cm²/Vs or more; and

90% or more of the p-channel type thin film transistors have mobility ata value of 150/Vs or more.

The above-described structure is formed on an insulating substraterepresented by a quartz substrate. The use of a substrate havinginsulating properties makes it possible to configure a circuit suitablefor operations at high speeds because it eliminates effects ofcapacitance of a substrate. According to another aspect of theinvention, an active layer of a thin film transistor is formed by acrystalline silicon film having a structure in which a multiplicity ofcolumnar crystal structures extend in a direction that matches themoving direction of carriers.

According to the invention, since a thin film semiconductor is used forthe active layer, the source and drain regions can be activated (afterdoping) by irradiating them with laser beams or intense beams.

This allows the use of aluminum which is a low-resistance material or amaterial mainly composed of aluminum for the gate electrode to improveadaptability to high speed operations.

Further, since the unique crystal structure suppresses the short-channeleffect, predetermined operational performance can be achieved withdimensions larger than dimensions indicated by conventional scalingrules.

For example, when the above-described crystalline silicon film is used,a gate insulation film having a thickness on the order of 500 Å providescharacteristics that have been available with only a gate insulationfilm having a thickness on the order of 200 Å according to conventionalscaling rules.

It is technically and economically difficult to form a thin gateinsulation film having preferable interface characteristics, no pin holeand a high withstand voltage over a large surface area.

From this point of view, it is advantageous to achieve predeterminedcharacteristics free of limitations placed by conventional scalingrules.

In addition, the average S-value of thin film transistors utilizing acrystalline silicon film having the above-described unique crystalstructure can be 100 mV/dec or less for either of p- and n-channel typethin film transistors even when a multiplicity of the same are formed ona substrate.

The S-value of a TFT fabricated using a general high temperature process(a general term that refers to processes for fabricating a TFT on aquartz substrate using an annealing step at about 1000° C.) is about 200mV/dec or more when it is an n-channel type TFT and about 350 mV/dec ormore when it is a p-channel type TFT.

The S-value of a TFT fabricated using a low temperature process (ageneral term that refers to processes for fabricating a TFT on a quartzsubstrate using a laser annealing step) is worse than that of a TFTfabricated using a high temperature process.

According to another aspect of the invention, there is provided a groupof operational amplifier circuits constituted by thin film transistorsformed on an insulating surface characterized in that:

the operational amplifier circuits comprise a combination of at leastn-channel type thin film transistors and p-channel type thin filmtransistors; and

active layers of the thin film transistors comprise a crystallinesilicon film having a structure wherein a multiplicity of columnarcrystal structures extend in a direction that matches the movingdirection of carriers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing an equivalent circuit of an operationalamplifier.

FIG. 2 illustrates the arrangement of patterns on an operationalamplifier constituted by thin film transistors formed on a quartzsubstrate.

FIG. 3 is a sectional view taken along the line A-A′ in FIG. 2.

FIG. 4 is a sectional view taken along the line B-B′ in FIG. 2.

FIG. 5 illustrates the distribution of mobility of n-channel type thinfilm transistors integrated on the same substrate.

FIG. 6 illustrates the distribution of mobility of p-channel type thinfilm transistors integrated on the same substrate.

FIG. 7 illustrates the distribution of thresholds of n-channel type thinfilm transistors integrated on the same substrate.

FIGS. 8A through 8D illustrate steps for fabricating thin filmtransistors.

FIG. 9 illustrates a schematic configuration of bottom-gate type thinfilm transistors.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENT

An active layer is formed by a crystalline silicon film having astructure wherein a multiplicity of crystal structures extending in acertain direction are arranged in parallel, and the direction in whichthe crystal structures extend is aligned with the direction of themoving direction of carriers. This makes it possible to provideadvantages that can not be achieved by conventional devices utilizingsingle crystal semiconductors and polycrystalline semiconductors.

The short channel effect is less likely to occur on such a crystallinesilicon film formed by a multiplicity of crystal structures extending inthe form of columns in a certain direction even if the dimension of achannel is reduced because the movement of carriers is regulated in thedirection in which they extend.

The reason is that the presence of a multiplicity of elongate andsubstantially monocrystalline regions (columnar regions) extending inparallel in the channel region suppresses the expansion of a depletionlayer in the channel between the source and drain regions.

In normal IC processing, efforts toward a finer structure result in asignificant short channel effect, and measures must be taken to dope ordiffuse impurities in the vicinity of a channel in order to suppressthis (which results in a very complicated structure) This increasestechnical and economical difficulties.

However, a crystalline silicon film having a unique crystal structure asdescribed above is characterized in that it suppresses the short channeleffect without any complicated structure because of the uniqueness ofthe crystal structure of itself.

Thin film transistors obtained using the same can be free of variationin characteristics in a plane of the substrate as shown in FIGS. 5through 7.

Meanwhile, crystalline silicon films provided on a glass substrate orquartz substrate using a conventional high temperature process or lowtemperature process have had the so-called polycrystalline structurewhich is an aggregation of a multiplicity of crystal grains(particularly those having no anisotropism).

In this case, it becomes more difficult to control the state of crystalinterfaces (particularly, the direction in which they extend and thequantity thereof) present in a channel as the device structure becomesfiner.

Specifically, the quantity and direction of crystal interfaces thatexist in a channel vary from device to device with decreasing size ofthe channel, which results in variation in device characteristics.

However, crystalline silicon films obtained according to the methodshown in FIGS. 8A through 8D have crystal grain boundaries aligned interms of the direction thereof and have widths which are constant tosome degree within a dimension of about 0.2 μm or less. Therefore, theyare less likely to cause variation of characteristics from device todevice due to the presence of the crystal grain boundaries when themoving direction of carriers (especially in channels) is matched withthe direction in which the crystal interfaces extend.

The reason is that the state of the crystal structure in the channelregion is similar in every device.

FIG. 1 shows an internal equivalent circuit of an operational amplifierformed by thin film transistors according to the present embodiment.FIG. 2 shows a mask pattern for the operational amplifier circuitrepresented by the equivalent circuit in FIG. 1. 201 designates apositive input. 202 designates a negative input. 203 designates anickel-added region. 204 designates wiring on a first layer. 205designates wiring on a second layer.

FIG. 3 shows a sectional view taken along the line A-A′ in FIG. 2. FIG.4 shows a sectional view taken along the line B-B′ in FIG. 2.

In this embodiment, nickel is introduced into the elongate regionspecified as the nickel-added region to cause crystallization of anamorphous silicon film to start there, thereby forming thin filmtransistors using this region.

In the circuit configuration shown in FIG. 1, it is important thattransistors Tr₈ and Tr₄ forming a differential circuit at the inputportion have similar characteristics. 101 designates bias, and 102designates output.

This embodiment has a pattern arrangement such that active layersforming the transistors Tr₈ and Tr₄ are arranged in positions at thesame distance from the nickel-added region. This suppresses variation incharacteristics that otherwise occurs due to a difference in thedistance of crystal growth.

Referring to active layers forming transistors Tr₆ and Tr₇, the activelayers are formed in positions at different distances of crystal growth(distances from the nickel-added region) because they are formedutilizing crystal growth from the same nickel-added region. This canresult in a very slight difference in characteristics between thetransistors Tr₆ and Tr₇, but such a difference in characteristicsbetween the two transistors will not create any serious problem in thiscircuit configuration.

In this embodiment, thin film transistors having the distribution ofcharacteristics in a plane of the substrate as shown in FIGS. 5 through7 are utilized.

While the characteristics of a single thin film transistor alone havebeen a matter of concern in the prior art, in the case of aconfiguration of an operational amplifier circuit as shown in FIG. 1,what is important is characteristics on a collective basis (in otherwords, the distribution of characteristics or the distribution ofvariation in characteristics).

The thin film transistors are formed on a quartz substrate according toa method of fabrication to be described later.

FIG. 5 shows the distribution of mobility of n-channel type thin filmtransistors. FIG. 6 shows the distribution of mobility of p-channel typethin film transistors. FIG. 7 shows the distribution of V_(th)(threshold voltages) of the n-channel thin film transistors.

FIGS. 5 through 7 show variation in the characteristics of TFTs on asingle substrate. The ordinate axes of FIGS. 5 through 7 indicate ratiosof presence in terms of percentage. The TFTs have a single gatestructure fabricated according the method of fabrication to be describedlater wherein the channel length is 8 μm and the channel width is 8 μm.

FIG. 5 shows that 90% or more of the n-channel type TFTs formed on thesame substrate have mobility of 260 cm²/Vs or more.

FIG. 6 shows that 90% or more of the resultant p-channel type TFTs havemobility of 150 cm²/Vs or more.

The above description means that 90 TFTs or more out of 100 TFTs whichhave been arbitrarily selected have the mobility as described above onaverage.

When an integrated circuit such as an operational amplifier isconfigured, it is important to use a group of elements having smallvariation in characteristics as shown in FIGS. 5 through 7.

For example, variation of V_(th) (threshold voltage) is an importantconsideration when using a power supply voltage for driving of 5 V or3.3 V or 1.5 V which will be more frequently used in the future.

[Method of Fabricating Thin Film Transistors]

FIGS. 8A through 8D schematically show steps for fabricating thin filmtransistors used in an operational amplifier circuit having a patternarrangement as shown in FIG. 2.

First, an amorphous silicon film 802 is formed on a quartz substrate 801to a thickness of 500 Å using low pressure thermal CVD. It is importantthat the quartz substrate used has a sufficiently smooth surface.

The thickness of the amorphous silicon film is preferably in the rangefrom about 100 Å to about 1000 Å. The reason is that the thickness of anactive layer is suppressed to some degree in order to achieve anannealing effect by irradiation with laser beams performed at asubsequent step of activating source and drain regions.

After the amorphous silicon film 802 is formed, a mask indicated by 803is formed by a silicon oxide film which is formed using plasma CVD. Thismask is formed with a hole indicated by 805 to provide a structurewherein the amorphous silicon film 802 is exposed in this region.

The hole 805 extends in the direction perpendicular to the plane of thedrawing (this hole corresponds to the nickel-added region 203 in FIG.2).

After the mask 803 is formed, a solution of nickel acetate containingnickel of 10 ppm by weight is applied using spin coating. Thus, a stateas indicated by 804 is realized wherein nickel is retained in contactwith the surface (FIG. 8A).

While a method of introducing nickel utilizing a solution has beendescribed here, nickel may be introduced on to the surface of theamorphous silicon film using methods such as CVD, sputtering, plasmaprocessing and gas adsorption.

Further, as a method of introducing nickel in a more accuratelycontrolled quantity and position, a method based on ion implantation canbe employed.

Instead of nickel, an element selected from among Fe, Co, Ru, Rh, Pd,Os, Ir, Pt, Cu and Au may be used. Such elements have a function ofpromoting crystallization of silicon.

Next, a heating process is performed in a nitrogen atmosphere for eighthours at 600° C. At this step, crystal growth proceeds in a direction inparallel with the substrate as indicated by 800.

After the crystallization achieved by this heating process, there aredefects in the film in a high density and the uniqueness of the crystalstructure to be detailed below is still insignificant (FIG. 8A).

The above-described heating process may be performed within atemperature range from 450° C. to the temperature that the substrate canwithstand (about 1100° C. in the case of a quartz substrate).

Next, the mask 803 is removed. A heating process is then performed for20 minutes at 950° C. in an oxygen atmosphere containing 3% HCl byvolume. This step forms a thermal oxidation film having a thickness of200 Å on the surface of the silicon film. The thickness of the siliconfilm is reduced to 400 Å at this step.

This step of heating process is important. This step of heating processanneals the crystalline silicon film and removes nickel from the film.This heating process provides a unique crystalline silicon film formedby a multiplicity of columnar crystal structures extending in a certaindirection in the form of columns having widths in the range from about0.5 μm to about 2 μm.

The formation of the thermal oxidation film provides two effects. One ofthe effects is a reduction of nickel in the silicon film as a result ofabsorption of nickel into the thermal oxidation film.

The other is an effect wherein silicon atoms which have been redundantor unstably bonded are consumed as the thermal oxidation film is formedto reduce defects greatly and consequently to improve crystallinity.

Then, the thermal oxidation film thus formed is removed. Since thisthermal oxidation film contains nickel in a relatively high density, theremoval of the thermal oxidation film makes it possible to eventuallyprevent nickel from adversely affecting the device characteristics.

When the 400 Å thick silicon film is thus obtained, it is patterned toform active layers of thin film transistors. FIG. 8B shows active layersindicated by 806 and 807.

It is important here to set the direction in which the sources anddrains are connected or the moving direction of carriers in the channelssuch that it matches the direction of the above-described direction ofcrystal growth (which coincides with the direction in which theabove-described columnar crystal structures extend).

In FIG. 8B, 806 designates an active layer of a p-channel type thin filmtransistor, and 807 designates an active layer of an n-channel type thinfilm transistor.

Although steps for fabricating only two thin film transistors areillustrated here, in practice, a multiplicity of nickel-added regions asillustrated in FIG. 2 are provided on the substrate to form amultiplicity of thin film transistors simultaneously.

After the active layers are formed, plasma CVD is performed to form asilicon oxide film having a thickness of 300 Å which is to serve as apart of a gate insulation film. Further, the second thermal oxidation iscarried out in an oxygen atmosphere containing 3% HCl by volume to forma thermal oxidation film to a thickness of 300 Å. This provides a gateinsulation film having a thickness of 600 Å consisting of theCVD-oxidated silicon film and the thermal oxidation film. As a result ofthis second formation of a thermal oxidation film, the thickness of theactive layers is reduced to 250 Å.

Next, gate electrodes 808 and 809 made of aluminum are formed. After thegate electrodes are formed, anodization is carried out to first formporous anodic oxide films 810 and 811. Further, the second anodizationis carried out to form anodic oxide films 812 and 813 having denser filmproperties. The difference in the properties of the anodic oxide filmsmay be selected depending on the type of electrolyte used.

Next, the exposed gate insulation film is removed. FIG. 8B shows gateinsulation films 814 and 815 left thereon.

In this state, doping for providing conductivity types is carried outusing plasma doping. Here, doping of B (boron) is carried out first withthe region to become an n-channel type thin film transistor masked witha resist mask. Then, doping of P (phosphorus) is carried out with theregion to become a p-channel type thin film transistor masked with aresist mask.

The doping at this step is performed under conditions for forming sourceand drain regions. At this step, a source region 816 and a drain region817 of a p-channel type TFT and a source region 819 and a drain region818 of an n-channel type TFT are formed on a self-alignment basis.

Thus, the state shown in FIG. 8B is realized. Next, the porous anodicoxide films 810 and 811 are removed.

Next, the second doping is carried out under conditions for lightdoping. At this step, low density impurity regions 820, 821, 823 and 824are formed on a self-alignment basis. Further, channel formation regions825 and 826 are formed on a self-alignment basis.

The low density impurity regions toward the drain regions become regionsreferred to as LDDs (lightly doped drains).

After the doping, laser beams are projected to activate the dopedelements and to anneal damage on the active layers caused by the doping.This step may be performed using methods that employ irradiation withultraviolet beams and infrared beams.

Next, a silicon nitride film 827 as a layer insulation film is formedusing plasma CVD to a thickness of 1500 Å, and a layer insulation film828 made of polyimide resin is further formed. The use of resin for thelayer insulation film allows the surface thereof to be planarized.

In addition to polyimide resin, it is possible to use polyamide resin,polyimideamide resin, acrylic resin, epoxy resin or the like.

Next, contact holes are formed to form a source electrode (and sourcewiring) 829 and a drain electrode (and drain wiring) 830 of thep-channel type TFT. Further, there is formed a source electrode (andsource wiring) 832 and a drain electrode (and drain wiring) 831 of then-channel type TFT.

There is thus provided a configuration wherein a p-channel type thinfilm transistor and an n-channel type thin film transistor areintegrated.

According to the fabrication steps described here, it is possible toprovide thin film transistors having excellent characteristics as shownin FIGS. 5 through 7 with less variation of characteristics by using aset of a multiplicity of columnar crystal structures extending inparallel in a certain direction as active layers.

Referring further to the characteristics, both of p- and n-channel typethin film transistors can be provided with S-values of 100 mV/dec orless on average.

The use of such thin film transistors makes it possible to configure anoperational amplifier circuit as shown in FIGS. 1 and 2.

[Another Configuration of Thin Film Transistor]

FIG. 9 shows another form of thin film transistors to which the presentinvention can be applied.

The thin film transistor shown in FIG. 9 is a bottom gate type thin filmtransistor and has a structure in which gate electrodes 902 and 903 areformed on a quartz substrate 901; a gate insulation film 904 is furtherformed; and an active layer is formed thereon.

In the configuration shown in FIG. 9, the active layer must be formedafter forming the gate electrodes and gate insulation film. Therefore,the active layer is formed in accordance with the above-described stepsfor fabricating thin film transistors shown in FIG. 8 after the gateinsulation film is formed.

[Still Another Configuration of Thin Film Transistor]

The steps for fabricating thin film transistors shown in FIGS. 8Athrough 8D represent an example wherein aluminum is used for gateelectrodes. Tantalum may be used instead of aluminum. Tantalum can alsobe anodized and can be used for fabrication of thin film transistorsaccording to the fabrication steps shown in FIGS. 8A through 8D.

Further, polysilicon and silicide having conductivity types can be usedfor gate electrodes. In this case, however, it is not possible to obtainthe advantage of low resistance which is available when aluminum isused.

The use of present invention makes it possible to fabricate a practicaloperational amplifier circuit using thin film transistors.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims.

1. A semiconductor device comprising a differential amplifier circuitcomprising: an insulating substrate; a first thin film transistorcomprising: a first active layer over the insulating substrate, having:a first source region; a first drain region; and a first channel formingregion between the first source region and the first drain region; and afirst gate electrode adjacent to the first active layer; a second thinfilm transistor comprising: a second active layer over the insulatingsubstrate, having: a second source region; a second drain region; and asecond channel forming region between the second source region and thesecond drain region; and a second gate electrode adjacent to the secondactive layer; a first input terminal electrically connected to the firstgate electrode; a second input terminal electrically connected to thesecond gate electrode; and an element-added region comprising anelement, wherein each of the first active layer and the second activelayer is formed of a semiconductor film, wherein the element acceleratesthe crystallizing of the semiconductor film, wherein a first distancebetween the first active layer and the element-added region issubstantially equal to a second distance between the second active layerand the element-added region, and wherein the element-added region isseparated from the first active layer by the first distance and from thesecond active layer by the substantially equal second distance.
 2. Thesemiconductor device according to claim 1, wherein the element-addedregion comprises at least two element-added semiconductor islands formedover the insulating substrate.
 3. The semiconductor device according toclaim 1, wherein each of the first thin film transistor and the secondthin film transistor is an n-channel thin film transistor.
 4. Thesemiconductor device according to claim 1, wherein the insulatingsubstrate is a quartz substrate.
 5. The semiconductor device accordingto claim 1, wherein the active layer comprises a plurality of elongatecrystal structures extending in a direction, wherein the direction issubstantially equal to a carrier moving direction in the first channelforming region, and wherein the direction is substantially equal to acarrier moving direction in the second channel forming region.
 6. Thesemiconductor device according to claim 1, wherein the first activelayer further comprises a first lightly doped drain region between thefirst channel forming region and the first drain region, and wherein thesecond active layer further comprises a second lightly doped drainregion between the second channel forming region and the second drainregion.
 7. The semiconductor device according to claim 1, wherein theelement is one selected from the group consisting of Ni, Fe, Co, Ru, Rh,Pd, Os, Ir, Pt, Cu and Au.
 8. A semiconductor device comprising anoperational amplifier comprising: an insulating substrate; a first thinfilm transistor comprising: a first active layer over the insulatingsubstrate, having: a first source region; a first drain region; and afirst channel forming region between the first source region and thefirst drain region; and a first gate electrode adjacent to the firstactive layer; a second thin film transistor comprising: a second activelayer over the insulating substrate, having: a second source region; asecond drain region; and a second channel forming region between thesecond source region and the second drain region; and a second gateelectrode adjacent to the second active layer; a first input terminalelectrically connected to the first gate electrode; a second inputterminal electrically connected to the second gate electrode; and anelement-added region comprising an element, wherein each of the firstactive layer and the second active layer is formed of a semiconductorfilm, wherein the element accelerates the crystallizing of thesemiconductor film, wherein a first distance between the first activelayer and the element-added region is substantially equal to a seconddistance between the second active layer and the element-added region,and wherein the element-added region is separated from the first activelayer by the first distance and from the second active layer by thesubstantially equal second distance.
 9. The semiconductor deviceaccording to claim 8, wherein the element-added region comprises atleast two element-added semiconductor islands formed over the insulatingsubstrate.
 10. The semiconductor device according to claim 8, whereineach of the first thin film transistor and the second thin filmtransistor is an n-channel thin film transistor.
 11. The semiconductordevice according to claim 8, wherein the insulating substrate is aquartz substrate.
 12. The semiconductor device according to claim 8,wherein the active layer comprises a plurality of elongate crystalstructures extending in a direction, wherein the direction issubstantially equal to a carrier moving direction in the first channelforming region, and wherein the direction is substantially equal to acarrier moving direction in the second channel forming region.
 13. Thesemiconductor device according to claim 8, wherein the first activelayer further comprises a first lightly doped drain region between thefirst channel forming region and the first drain region, and wherein thesecond active layer further comprises a second lightly doped drainregion between the second channel forming region and the second drainregion.
 14. The semiconductor device according to claim 8, wherein theelement is one selected from the group consisting of Ni, Fe, Co, Ru, Rh,Pd, Os, Ir, Pt, Cu and Au.